Our most impactful work spans GaN power electronics, microfluidic in-chip cooling, ultrafast THz devices, and ultra-wide-bandgap semiconductors — published in Nature, Nature Electronics, IEEE Electron Device Letters, and the most selective venues in the field.
Monolithically-integrated manifold microchannel cooling delivering >1.7 kW/cm² with 50× coefficient-of-performance improvement. Foundation of Corintis.
New class of electronic metadevices generating THz signals beyond the cut-off frequency of the underlying transistors, opening a path to efficient THz electronics.
On-chip integrated nano-scale plasma enabling picosecond switching of high-power electrical signals — a new paradigm for ultrafast electronics.
Multi-channel GaN nanowire devices setting new benchmarks for high-voltage, low-loss power conversion.
Ultrafast probing of VO₂ reveals glass-like dynamics — a route to neuromorphic computation and multilevel memories.
Record-breaking 1200 V GaN multi-channel power devices combining ultra-low on-resistance with high breakdown voltage.
Introduction of the slanted tri-gate architecture — a foundational concept for high-performance GaN power devices now widely adopted.
Theory and design of intrinsic polarization superjunctions — a new route to high breakdown voltage in multichannel GaN devices.
Our complete library — including articles, proceedings, theses, and patents — is maintained on the EPFL POWERlab site and updated continuously.
We're always looking for curious, driven researchers to push the limits of power, ultrafast, and thermal electronics. If our work resonates with you, we'd like to hear from you.